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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:42 Issue:4 Help

Application of the TLM method to transient thermal simulation of microwave power transistors

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2 Author(s)
Webb, P.W. ; Sch. of Electron. & Electr. Eng., Birmingham Univ., UK ; Russell, I.A.D.

The transmission line matrix (TLM) explicit method of numerical simulation has been used to model the transient thermal properties of various microwave heterojunction bipolar transistor (HBT's) power structures, used in a pulsed mode. Control of the time step during the simulation is of paramount importance and the paper outlines some of the problems encountered using time step control methods currently published and describes an improved algorithm. This improved time step control method has been implemented in a general purpose 3D TLM transient thermal simulator. Some simulation results are described for a variety HBT transistor structures with very different thermal time constants

Published in:
Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 4 )

Date of Publication: Apr 1995

Page(s):
624 - 631
ISSN :
0018-9383
INSPEC Accession Number:
4930858
Digital Object Identifier :
10.1109/16.372064
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Apr 1995
Sponsored by :
IEEE Electron Devices Society

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