Referenced Items are not available for this document.
An inverse modeling technique is introduced to determine the structural and physical parameters of HEMT from the desired data for maximum transconductance. The technique is based on the availability of analytical expressions describing the electron carrier concentration, the current, the transconductance, the capacitances and the unity current gain frequency of a HEMT. Empirical formulae are obtained that relate the maximum transconductance to the doped AlGaAs thickness, spacer layer thickness, dopant density and aluminum mole fraction. The technique is applied to the design of a HEMT and shows good agreement with the experimental data
Published in:
Electron Devices, IEEE Transactions on
(Volume:42
,
Issue:
4
)
Date of Publication: Apr 1995
- Page(s):
- 598 - 604
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4930854
- Digital Object Identifier :
- 10.1109/16.372060
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1995
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
