By Topic

New RTD large-signal DC model suitable for PSPICE

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zhixin Yan ; Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada ; Deen, M.J.

A new resonant-tunnel diode (RTD) large-signal DC model suitable for PSPICE simulation is presented in this paper. For better accuracy, the model equations are deliberately chosen through the combination of Gaussian and/or exponential functions, and it can be easily implemented in PSPICE using the FUNCTION statement. Most of the associated parameters required in this new model have explicit relations to the measured I-V curves, and can be easily extracted. This new DC model has been successfully applied to simulating single RTD devices, and a RTD-based three-state memory circuit. Compared to other RTD DC models, the presented model gives better accuracy and has less convergence problems. In addition, the new model can be used to simulate hysteresis effect, and can easily incorporate AC effects

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:14 ,  Issue: 2 )