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Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistors

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4 Author(s)
Tutt, M.N. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Pavlidis, D. ; Khatibzadeh, A. ; Bayraktaroglu, B.

The low frequency noise characteristics of modern self-aligned AlGaAs/GaAs power HBT's have been studied as a function of bias, temperature, frequency, and circuit topology. The devices have a 1/fγ behavior between 10 Hz and 100 Hz with 0.78⩽γ⩽1.65. Strong deviation from 1/fγ is measured at higher frequencies due to trapping. The bias dependence of the collector noise ranged from IC1.5-IC 2.6, while that for the base noise ranges from IB 0.7-IB2.5. In all cases the collector noise is greater than the base noise. The base noise is apparently dominated by surface recombination noise and generation-recombination (G-R) noise. The collector noise is due to recombination mechanisms and G-R noise. The activation energy (Ea ) of the most significant trap is approximately 0.58 eV. The noise of the devices tested was found to be dominated by material and fabrication related mechanisms and not by fundamental mechanisms

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 2 )

Date of Publication:

Feb 1995

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