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High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing

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5 Author(s)
A. Kohno ; Fac. of Sci., Kyushu Univ., Fukuoka, Japan ; T. Sameshima ; N. Sano ; M. Sekiya
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Key technologies for fabricating polycrystalline silicon thin film transistors (poly-Si TFTs) at a low temperature are discussed. Hydrogenated amorphous silicon films were crystallized by irradiation of a 30 ns-pulsed XeCl excimer laser. Crystalline grains were smaller than 100 nm. The density of localized trap states in poly-Si films was reduced to 4×1016 cm-3 by plasma hydrogenation only for 30 seconds. Remote plasma chemical vapor deposition (CVD) using mesh electrodes realized a good interface of SiO 2/Si with the interface trap density of 2.0×1010 cm-2 eV-1 at 270°C. Poly-Si TFTs were fabricated at 270°C using laser crystallization, plasma hydrogenation and remote plasma CVD. The carrier mobility was 640 cm2/Vs for n-channel TFTs and 400 cm2/Vs for p-channel TFTs. The threshold voltage was 0.8 V for n-channel TFTs and -1.5 V for p-channel TFTs. The leakage current of n-channel poly-Si TFTs was reduced from 2×10-10 A/μm to 3×10-13 A/μm at the gate voltage of -5 V using an offset gate electrode with an offset length of 1 μm

Published in:

IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 2 )