By Topic

Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

A new model description for the behaviour of epitaxial collectors in bipolar transistors is given. This is part of MEXTRAM, a compact model for circuit simulation, and it gives the voltage drop and stored minority carrier charge in the collector epilayer as a function of the bias conditions. It covers (total) depletion and quasi-saturation for both ohmic and space charge conditions in the end region of the epilayer. New features are that the collector current and stored charge are given as explicit analytical functions, thus guaranteeing continuity also for their derivatives, and that collector current spreading is taken into account

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 2 )