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An advanced technique for fabricating hemispherical-grained (HSG) silicon storage electrodes

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6 Author(s)
Watanabe, H. ; ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan ; Tatsumi, T. ; Ikarashi, Taeko ; Sakai, A.
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In this new fabrication technology for high-density DRAM's, an electrode with even-surface amorphous-silicon is changed to one with uneven-surface hemispherical-grained Si (HSG-Si). This fabrication method consists of easily controllable processes: formation of smooth amorphous Si electrodes by low-pressure chemical vapor deposition followed by removal of native oxide and high-vacuum annealing. This annealing process can form HSG-Si covering the entire surface of all types of storage electrodes, including side-wall surfaces which had previously been dry-etched. The resulting storage electrode with HSG-Si can store 1.8 times as much charge as can be stored on an electrode without HSG-Si. Such an increase makes it possible to reduce the height of storage electrodes. This technique is applicable to the fabrication of high-density DRAM's

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 2 )

Date of Publication:

Feb 1995

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