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An improved analytical solution of energy balance equation for short-channel SOI MOSFET's and transverse-field-induced carrier heating

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1 Author(s)
Omura, Y. ; NTT LSI Labs., Atsugi, Japan

This paper presents a method for solving the one-dimensional (1-D) energy balance equation for fully depleted short-channel SOI MOSFET's. This method takes the exact kinetic energy into account and provides a new analytical solution for the non-saturated drain current region. The carrier temperature for spatially homogeneous case is described as a function of the longitudinal electric field and the carrier concentration deviation. The electron temperature is higher than that predicted by old models, which is examined by the two-dimensional simulation. The experimental data on gate current characteristics in short-channel SOI nMOSFET's can be physically interpreted by the proposed 1-D model

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 2 )

Date of Publication:

Feb 1995

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