Referenced Items are not available for this document.
This paper presents a method for solving the one-dimensional (1-D) energy balance equation for fully depleted short-channel SOI MOSFET's. This method takes the exact kinetic energy into account and provides a new analytical solution for the non-saturated drain current region. The carrier temperature for spatially homogeneous case is described as a function of the longitudinal electric field and the carrier concentration deviation. The electron temperature is higher than that predicted by old models, which is examined by the two-dimensional simulation. The experimental data on gate current characteristics in short-channel SOI nMOSFET's can be physically interpreted by the proposed 1-D model
Published in:
Electron Devices, IEEE Transactions on
(Volume:42
,
Issue:
2
)
Date of Publication: Feb 1995
- Page(s):
- 301 - 306
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4877232
- Digital Object Identifier :
- 10.1109/16.370065
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1995
- Sponsored by :
- IEEE Electron Devices Society
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