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Characteristics of new dielectric isolation wafers for high voltage power IC's by single-Si poly-Si direct bonding (SPSDB) technique

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3 Author(s)
Y. Inoue ; Res. Lab., Hitachi Ltd., Ibaraki, Japan ; Y. Sugawara ; S. Kurita

Physical and mechanical characteristics of a new DI (Dielectric Isolation) wafer based on a single-Si poly-Si direct bonding (SPSDB) technique were investigated to reduce wafer warpage, increase wafer size and decrease minimum device patterning size. Developed SPSDB wafers of 5-inch size had unchanging warpage height and high bonding strength. When SPSDB wafers were bonded at 1100°C for 2 h, the latter property was comparable to that of the thermal oxidizing layer interface

Published in:

IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 2 )