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On the non-ideal characteristics of Schottky-Barrier-gate diodes in In0.52Al0.48As/In0.53Ga0.47 As heterostructure FET's on InP substrates

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2 Author(s)
Sung, R. ; Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA ; Das, M.B.

We report results of determination of the zero-field barrier heights of Schottky-barrier-gate-diodes in InAlAs/InGaAs heterostructure modulation doped FET's by exploiting their temperature dependent I-V characteristics. The field-emission model has been found to account for the gate current flow mechanism particularly at temperatures below 200 K. Using this model the influence of the InAlAs/InGaAs heterostructure potential barrier on the gate current has been delineated and a possible cause behind the current's wide-range of variability, from 10-1 to 102 A/cm2 within 100 mV forward bias, has been suggested

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 1 )