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Physical model of threshold voltage in silicon MOS transistors including reverse short channel effect

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3 Author(s)
Brut, H. ; Central R&D, SGS-Thomson Microelectron., Crolles, France ; Juge, A. ; Ghibaudo, G.

A physically based model for the MOSFET threshold voltage accounting for the reverse short channel effect is proposed. This threshold voltage model which incorporates the inhomogeneous transverse and longitudinal doping profiles as well as the conventional charge sharing short channel effect, has been successfully tested on several submicronic technologies with various channel lengths

Published in:

Electronics Letters  (Volume:31 ,  Issue: 5 )