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Measurement of the thickness of dielectric thin films on silicon photodetectors using the angular response to incident linearly polarized light

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2 Author(s)
R. M. A. Azzam ; Dept. of Electr. Eng., New Orleans Univ., LA, USA ; M. M. K. Howlader

A simple and accurate technique for measuring the thickness of dielectric thin films on solid state photodetectors is described. It is based on the angle-of-incidence-dependent response of the detector to incident p(TM)- or s(TE)-polarized monochromatic light. The method is applied to determine the thickness of SiO2 films on planar-diffused Si photodiodes to within ±1 nm

Published in:

IEEE Transactions on Instrumentation and Measurement  (Volume:43 ,  Issue: 6 )