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Improved circuit technique to reduce hfe degradation in bipolar output drivers

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2 Author(s)
I. C. Kizilyalli ; AT&T Bell Labs., Allentown, PA, USA ; C. C. McAndrew

hfe degradation in bipolar transistors caused by reverse Vbe stress decreases the reliability of BiCMOS circuits. In this paper, we present an improved circuit technique to limit reverse Vbe, and thus significantly increase BiCMOS reliability. The technique also reduces the base-emitter breakdown voltage constraint on BiCMOS technology design

Published in:

IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 3 )