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A versatile half-micron complementary BiCMOS technology for microprocessor-based smart power applications

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3 Author(s)
Tsui, P.G.Y. ; Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA ; Gilbert, P.V. ; Shih-Wei Sun

A modular, high density 0.5 μm Complementary BiCMOS technology with integrated high-voltage Lateral Diffused MOS (LDMOS) and conductivity modulated Lateral Insulated Gate Bipolar Transistor (LIGBT) structures designed for high performance, multi-functional integrated circuit applications is described. The advantages of VLSI processing and 0.5 μm compatible layout rules have been applied to the design and fabrication of the tight-pitch high-voltage devices without sacrificing the performance of 0.5 μm dual-poly (N+/P+) gate CMOS and complementary vertical bipolar transistors. Single chip integration of VLSI microprocessors with high-voltage and/or high-current input and output functions for “Smart Power” applications can be achieved using this technology

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 3 )