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Effect of bipolar turn-on on the static current-voltage characteristics of scaled vertical power DMOSFET's

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2 Author(s)
Fischer, K.J. ; Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA ; Shenai, K.

The parasitic bipolar transistor inherent in the power vertical Double Diffused MOSFET (DMOSFET) structure can have a significant impact on its performance and reliability. Selectively formed TiSi2 films on source contacts were used to reduce the contact resistance to n + source diffusion. These devices exhibit “kinks” in the output I-V characteristics. High contact resistance of TiSi2 to moderately doped p-body diffusion causes high output conductance. Detailed two-dimensional numerical simulations are used to investigate the effect of the parasitic bipolar transistor on the static characteristics of scaled silicided DMOSFET's. The high contact resistance of TiSi2-p-body interface leads to a floating potential and causes significant reduction in the MOS gate threshold voltage and results in a premature bipolar turn-on. It is shown that the parasitic bipolar turn-on places an important constraint on the scalability of the device into the submicron regime. A novel self-aligned DMOSFET structure with a shallow diffused p+ region is shown to eliminate this effect. Numerical simulations are shown to be in excellent agreement with the measured data at various temperatures

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 3 )