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An accurate intrinsic capacitance modeling for deep submicrometer MOSFET's

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4 Author(s)
Cho, D.-H. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Sung-Mo Kang ; Kim, Kyung-Ho ; Sang-Hoon Lee

This paper presents a new approach to the modeling of MOSFET capacitive characteristics for accurate simulation of deep submicrometer integrated circuits. The C-V characteristics of our new quasistatic intrinsic capacitance model accurately describes the short channel effects of deep submicrometer MOSFET's by accounting for velocity saturation and series resistance effects. The use of charge equations consistent with the short channel I-V characteristics leads to C-V characteristics which preserve all major short channel effects. The C-V calculation, based on nonpinned surface potential approach and drift-diffusion model, shows highly accurate short-channel effects and inherently smooth transitions for all conditions of device operation. The accuracy of the C-V characteristics has been demonstrated by comparison with the Ward-Dutton model and PISCES simulation results

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 3 )