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Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

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7 Author(s)
D. L. Harame ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; J. H. Comfort ; J. D. Cressler ; E. F. Crabbe
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For pt. I, see ibid., vol. 3, p. 455-68 (1995). This part focuses on process integration concerns, first described in general terms and then detailed through an extensive review of both simple non-self-aligned device structures and more complex self-aligned device structures. The extension of SiGe device technology to high levels of integration is then discussed through a detailed review of a full SiGe HBT BiCMOS process. Finally, analog circuit design is discussed and concluded, with a description of a 12-bit Digital-to-Analog Converter presented to highlight the current status of SiGe technology

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IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 3 )