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Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

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7 Author(s)
D. L. Harame ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; J. H. Comfort ; J. D. Cressler ; E. F. Crabbe
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A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented

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IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 3 )