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320 Gb/s high-speed ATM switching system hardware technologies based on copper-polyimide MCM

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6 Author(s)
Yamanaka, N. ; NTT Commun. Switching Labs., Musashino, Japan ; Ken-ichi Endo ; Genda, K. ; Fukuda, H.
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This paper describes a 320 Gb/s high-speed multi-chip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCMs that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSIs are mounted on MCM using the 150 μm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput and it is applicable for future B-ISDN

Published in:

Electronic Components and Technology Conference, 1994. Proceedings., 44th

Date of Conference:

1-4 May 1994