The study of coupling phenomena between lines laid on semiconductor substrates in monolithic microwave integrated circuit (MMIC) technologies and the determination of propagation effects on power FETs require the characterization of lines with micron transversal widths. For such lines, the influence of metallization thickness and dielectric cap layer on propagation properties can not be neglected. These effects are characterized for the case of coplanar lines laid on semiconductor substrates. The mathematical development used and the results obtained by a numerical technique are presented
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:36
,
Issue:
8
)
Date of Publication: Aug 1988