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A novel memory cell for multiport RAM on 0.5 μm CMOS Sea-of-Gates

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6 Author(s)
Nii, K. ; System LSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan ; Maeno, H. ; Osawa, T. ; Iwade, S.
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A novel memory cell circuit for multiport RAM on CMOS Sea-of-Gates (SOG) has been proposed. It contributes to the operation both at high speed and at low voltage. In addition, a fourfold read bit line technique is also proposed to reduce the access time. A multiport RAM generator with the novel memory cell has been developed. 2-port or 3-port RAM's with flexible bit-word configurations are available. Test chips containing seven generated RAM's were designed and fabricated on 0.5 μm CMOS SOG. The experimental results of the chip show that each RAM operates at over 1.4 V and that the address access time of the 3-port RAM (16b×256w) is 4.8 ns at 3.3 V

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:30 ,  Issue: 3 )