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Low threshold 1.3 μm-GaInAsP/InP tensile strained single quantum well lasers grown by low-pressure MOCVD

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4 Author(s)
Yokouchi, N. ; Yokohama Res. & Dev. Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Yamanaka, N. ; Iwai, N. ; Kasukawa, A.

1.3 μm Ga0.49In0.51As0.7P0.3-1.15% tensile strained single quantum well (SQW) lasers are successfully fabricated. The lowest threshold current for a 200 μm-long, 20 μm-wide ridge waveguide laser with high reflectivity coating is as low as 6 mA, corresponding to a very low threshold current density of 150 A/cm2

Published in:

Electronics Letters  (Volume:31 ,  Issue: 2 )