Cart (Loading....) | Create Account
Close category search window
 

New high power planar gate GaAs MESFETs with improved gate-drain breakdown voltage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Fujimoto, H. ; Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; Tanabe, M. ; Maeda, M. ; Tamura, A.

The authors present a new approach to power GaAs MESFETs with planar gate structures, based on the MBE growth technique on an undoped surface GaAs layer on an ion-implanted channel layer. This undoped GaAs layer increases the gate-drain breakdown voltage and serves as both an ideal passivation layer and an ideal annealing cap of ion implanted channels. To realise a good surface condition before MBE growth, the UV-ozone surface treatment is introduced. This new simple structure offers high performance power GaAs MESFETs

Published in:

Electronics Letters  (Volume:31 ,  Issue: 2 )

Date of Publication:

19 Jan 1995

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.