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New high power planar gate GaAs MESFETs with improved gate-drain breakdown voltage

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4 Author(s)
H. Fujimoto ; Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; M. Tanabe ; M. Maeda ; A. Tamura

The authors present a new approach to power GaAs MESFETs with planar gate structures, based on the MBE growth technique on an undoped surface GaAs layer on an ion-implanted channel layer. This undoped GaAs layer increases the gate-drain breakdown voltage and serves as both an ideal passivation layer and an ideal annealing cap of ion implanted channels. To realise a good surface condition before MBE growth, the UV-ozone surface treatment is introduced. This new simple structure offers high performance power GaAs MESFETs

Published in:

Electronics Letters  (Volume:31 ,  Issue: 2 )