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Browse Journals & Magazines > Electronics Letters ...> Volume:31 Issue:2 Help

New mechanism of hot carrier generation in very short channel MOSFETs

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2 Author(s)
Childs, P.A. ; Sch. of Electron. & Electr. Eng., Birmingham Univ., UK ; Leung, C C C

Results are presented which suggest that as device dimensions are scaled down, hot carrier reliability problems may re-emerge despite reductions in supply voltage. This conclusion is drawn from theoretical results which show an increasingly important role played by electron-electron interactions as device dimensions are reduced

Published in:
Electronics Letters  (Volume:31 ,  Issue: 2 )

Date of Publication: 19 Jan 1995

Page(s):
139 - 141
ISSN :
0013-5194
INSPEC Accession Number:
4876936
Digital Object Identifier :
10.1049/el:19950091
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
19 Jan 1995
Sponsored by :
Institution of Engineering and Technology

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