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Browse Journals & Magazines > Electronics Letters ...> Volume:31 Issue:1 Help

Calculating double-exponential diode model parameters from previously extracted single-exponential model parameters

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3 Author(s)
Garcia Sanchez, F.J. ; Dept. de Electronica, Univ. Simon Bolivar, Caracas, Venezuela ; Ortiz-Conde, A. ; Liou, J.J.

A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential model of a diode's current-voltage experimental characteristics from previously extracted reverse current and diode quality factor of the diode's single-exponential model. The procedure is illustrated by modelling the drain-body junction of a MOSFET including its parasitic series resistance

Published in:
Electronics Letters  (Volume:31 ,  Issue: 1 )

Date of Publication: 5 Jan 1995

Page(s):
71 - 72
ISSN :
0013-5194
INSPEC Accession Number:
4866276
Digital Object Identifier :
10.1049/el:19950030
Date of Current Version :
06 August 2002
Issue Date :
5 Jan 1995
Sponsored by :
Institution of Engineering and Technology

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