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Electromigration of ionized cluster beam deposited aluminum metallizations

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1 Author(s)
Hummel, R.E. ; Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA

The activation energy of electromigration for ionized-cluster-beam-deposited aluminum films on 7000-Å-thick SiO 2 was found to be 1.1 eV compared to 0.5 eV, for conventionally deposited aluminum films. Aluminum films on oxide-free silicon did not show any hole formation or resistance increase during DC stressing

Published in:

Reliability Physics Symposium, 1989. 27th Annual Proceedings., International

Date of Conference:

11-13 Apr 1989