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High-power and wide-temperature-range operations of InGaAsP-InP strained MQW lasers with reverse-mesa ridge-waveguide structure

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5 Author(s)
M. Aoki ; Central Res. Lab., Hitachi Ltd., Kokubunji, Japan ; T. Tsuchiya ; K. Nakahara ; M. Komori
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A new structure for an InP-based ridge-waveguide laser is demonstrated. It has a reverse-trapezoid-ridge shape that offers reduced threshold current and smaller series resistance suitable for wide-temperature-range and high power operations. A 1.3 μm strained InGaAsP-InP MQW laser with the new ridge structure demonstrated over 200 mW output under a 440 mA injected current. Low threshold (<25 mA) and high efficiency (>0.3 W/A) operation was also achieved under 90/spl deg/C for 1.53 μm strained MQW lasers.

Published in:

IEEE Photonics Technology Letters  (Volume:7 ,  Issue: 1 )