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Microwave characterization of corner reflector p-doped multiple quantum-well lasers

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5 Author(s)
Spencer, R.M. ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; O'Keefe, S.S. ; Martin, G.H. ; Schaff, W.J.
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We report on the dc and microwave characterization of p-doped multiple quantum-well strained layer lasers with single-ended output provided by the use of a total-internal-reflector corner facet formed with chemically assisted ion beam etching. Mesa geometry devices suitable for on-wafer microwave probing with 150 μm cavity lengths have threshold currents of 12 mA and bandwidths of 20 GHz. Damping rates as a function of the square of resonance for corner reflector (CR) devices and standard devices with two plane mirrors mere compared, showing that the high speed characteristics of CR devices were quite similar to standard devices. Simplicity in processing and single-sided output makes these lasers ideal candidates for efficient, broad bandwidth optical sources suitable for monolithic integration into OEICs.

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Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 1 )