Referenced Items are not available for this document.
The linearities of pseudomorphic heterostructure Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As doped-channel FETs (DCFETs) and HEMTs were evaluated by DC and RF testings. Due to the absence of parallel conduction in the doped-channel approach, as compared to the modulation-doped structure, a wide and flat device performance together with a high current density was achieved. This improvement of device linearity suggests that doped-channel designs are suitable for high frequency power device application.<
Published in:
Electron Device Letters, IEEE
(Volume:16
,
Issue:
1
)
Date of Publication: Jan. 1995
- Page(s):
- 33 - 35
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4867065
- Digital Object Identifier :
- 10.1109/55.363208
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan. 1995
- Sponsored by :
- IEEE Electron Devices Society
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