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Effect of mechanical stress for thin SiO2 films in TDDB and CCST characteristics

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6 Author(s)
Y. Ohno ; Mitsubishi Electr. Corp., Hyogo, Japan ; A. Ohsaki ; T. Kaneoka ; J. Mitsuhashi
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The effects of mechanical stress for thin SiO2 films in TDDB (time-dependent dielectric breakdown) and CCST (constant-current stress test) are discussed. Compressive stress induced by a WSi2 layer enhances generation of native traps induced by electron injection and degrades the CCST characteristics of MOS capacitors. In TDDB characteristics, the compressive stress decreases the intrinsic lifetime for thin SiO2 films. The tensile stress induced by the plasma SiO layer does not degrade the CCST characteristics. The generation of interface states by electron injection is enhanced on the MOS capacitors by the tensile stress. The mechanical stress degrades the reliability of MOS capacitors with thin SiO2 films

Published in:

Reliability Physics Symposium, 1989. 27th Annual Proceedings., International

Date of Conference:

11-13 Apr 1989