Referenced Items are not available for this document.
A DC-coupled silicon bipolar amplifier IC, for operation in future multigigabit optical communication systems, has been fabricated using ⩾30 GHz double-polysilicon transistors. Using a novel HF connection technique for reducing the bondwire inductance, we have succeeded in the fabrication of a 14 dB gain amplifier IC, with a flatness better than ±0.5 dB, combined with a -3 dB bandwidth of 12.8 GHz. This is the highest bandwidth ever reported for a bonded amplifier circuit in any semiconductor technology
Published in:
Electronics Letters
(Volume:31
,
Issue:
3
)
Date of Publication: 2 Feb 1995
- Page(s):
- 181 - 183
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4882429
- Digital Object Identifier :
- 10.1049/el:19950118
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 2 Feb 1995
- Sponsored by :
- Institution of Engineering and Technology
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