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15 Gbit/s silicon bipolar amplifier IC using a novel mounting technique

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2 Author(s)
Hageraats, J.J.E.W. ; Wideband Commun. Syst., Philips Res. Lab., Eindhoven, Netherlands ; Pruijmboom, A.

A DC-coupled silicon bipolar amplifier IC, for operation in future multigigabit optical communication systems, has been fabricated using ⩾30 GHz double-polysilicon transistors. Using a novel HF connection technique for reducing the bondwire inductance, we have succeeded in the fabrication of a 14 dB gain amplifier IC, with a flatness better than ±0.5 dB, combined with a -3 dB bandwidth of 12.8 GHz. This is the highest bandwidth ever reported for a bonded amplifier circuit in any semiconductor technology

Published in:

Electronics Letters  (Volume:31 ,  Issue: 3 )