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Browse Journals & Magazines > Electronics Letters ...> Volume:31 Issue:3 Help

Extremely high characteristic temperature T0 of 0.98 μm InGaAs/lnGaP strained quantum well lasers with GaAs/lnGaP superlattice optical confinement layer

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3 Author(s)
Usami, M. ; KDD Kamifukuoka R&D Labs., Saitama, Japan ; Matsushima, Y. ; Takahashi, Y.

The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL “see” greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature TO of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL

Published in:
Electronics Letters  (Volume:31 ,  Issue: 3 )

Date of Publication: 2 Feb 1995

Page(s):
192 - 193
ISSN :
0013-5194
INSPEC Accession Number:
4882435
Digital Object Identifier :
10.1049/el:19950137
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
2 Feb 1995
Sponsored by :
Institution of Engineering and Technology

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