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Energy scaling and subnanosecond switching of symmetric self-electrooptic effect devices

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5 Author(s)
Lentine, A.L. ; AT&T Bell Lab., Naperville, IL, USA ; Chirovsky, L.M.F. ; D'Asaro, L.A. ; Tu, C.W.
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The authors report the scaling of switching energy with device area for four sizes of symmetric self-electrooptic effect devices, the smallest of which has a switching energy of 3.6 pJ. Switching speeds of approximately 2 ns at 15 V bias and approximately 860 ps at 22 V bias were attained by using mode-locked (6 ps) pulses, although the energies in these pulses were somewhat higher, because of saturation of the quantum-well material. Making the device area only moderately larger than the spot size is suggested as a method of avoiding this saturation.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:1 ,  Issue: 6 )