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Switching operation in OMVPE grown GaInAs/InP MQW intersectional optical switch structures

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8 Author(s)
Kikugawa, T. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; Ravikumar, K.G. ; Shimomura, K. ; Izumi, A.
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An intersectional optical switch structure with an intersecting angle of 6 degrees was fabricated on an organometallic vapor-phase epitaxy (OMVPE) grown GaInAs/InP multiple quantum-well (MQW) layered wafer. Switching operation using field-induced refractive index variation was successfully demonstrated at the reverse bias voltage of 8 V for the 1.6 mu m wavelength region. Based on this switching, the field-induced refractive index variation in the QW was estimated as around 1%.<>

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Photonics Technology Letters, IEEE  (Volume:1 ,  Issue: 6 )