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Monolithically integrated InGaAs-P-I-N InP-MISFET PINFET grown by chloride vapor phase epitaxy

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6 Author(s)
Antreasyan, A. ; AT&T Bell Lab., Murray Hill, NJ, USA ; Garbinski, P.A. ; Mattera, V.D. ; Temkin, H.
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The authors report the preparation and performance of a monolithically integrated InGaAs p-i-n detector InP metal-insulator-semiconductor field-effect transistor (PINFET) receiver. The device was grown by two-step chloride vapor-phase epitaxy. The sensitivity of the receiver was measured as -33.9 and -25.4 dBm at 200 and 600 Mb/s, respectively, at a bit-error-rate of 10/sup -9/ and a wavelength of 1.55 mu m. It is noted that the performance of the PINFET receiver is currently limited by the thermal noise of the load resistance R/sub L/, which is 5 k Omega .<>

Published in:

Photonics Technology Letters, IEEE  (Volume:1 ,  Issue: 6 )

Date of Publication:

June 1989

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