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Large-signal time-domain simulation of HEMT mixers

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5 Author(s)
Wang, G.-W. ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; Ichitsubo, I. ; Ku, W.H. ; Young-Kai Chen
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A large-signal HEMT (high electron mobility transistor) model and a time-domain nonlinear circuit analysis program have been developed. A systematic method to simulate HEMT mixers and design them for maximum conversion gain is presented. The transconductance-compression effect reduced the mixer's conversion gain at high frequencies. Simulation results from mixers designed to operate at 10, 20, and 40 GHz show that a reduction in parasitic conduction in the AlGaAs layer significantly increases the conversion gain

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:36 ,  Issue: 4 )