Cart (Loading....) | Create Account
Close category search window
 

Large-signal time-domain simulation of HEMT mixers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wang, G.-W. ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; Ichitsubo, I. ; Ku, W.H. ; Young-Kai Chen
more authors

A large-signal HEMT (high electron mobility transistor) model and a time-domain nonlinear circuit analysis program have been developed. A systematic method to simulate HEMT mixers and design them for maximum conversion gain is presented. The transconductance-compression effect reduced the mixer's conversion gain at high frequencies. Simulation results from mixers designed to operate at 10, 20, and 40 GHz show that a reduction in parasitic conduction in the AlGaAs layer significantly increases the conversion gain

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:36 ,  Issue: 4 )

Date of Publication:

Apr 1988

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.