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L- and S-band low-noise cryogenic GaAs FET amplifiers

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2 Author(s)
De Panfilis, S. ; Dept. of Phys. & Astron., Rochester Univ., NY, USA ; Rogers, J.

The authors present the results of the construction and testing of three cryogenic low-noise GaAs FET amplifiers, based on a National Radio Astronomy Observatory design, to be used in a detector for the axion, a hypothetical particle. The amplifiers are centered on 1.1 GHz, and 2.4 GHz, have a gain of approximately 30 dB in bandwidths of 300 MHz, 225 MHz, and 310 MHz, and have minimum noise temperatures of 7.8 K, 8 K, and 15 K, respectively

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:36 ,  Issue: 3 )