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Switch-level simulation of total dose effects on CMOS VLSI circuits

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4 Author(s)
Bhuva, B.L. ; Dept. of Electr. & Biomed. Eng., Vanderbilt Univ., Nashville, TN, USA ; Paulos, J.J. ; Gyurcsik, R.S. ; Kerns, S.E.

The effects of radiation exposure on the performance of CMOS integrated circuits are difficult to predict and to simulate due to the bias-dependent device parameter shifts. Simulation methodologies for identification of failure mechanisms and performance estimation are developed. These simulation algorithms are implemented in the PARA simulator for switch-level simulation of radiation effects. Simulation results for test circuits are presented that prove that accurate estimations are possible without CPU-intensive simulation programs

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:8 ,  Issue: 9 )

Date of Publication:

Sep 1989

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