Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zhu, L.D. ; Inst. of Semicond., Chinese Acad. of Sci., Beijing, China ; Zheng, B.Z. ; Feak, G.A.B.

The temperature dependence of the optical gain in graded-index separate-confinement heterostructure single-quantum-well lasers with different quantum-well widths were investigated. The observed dependence of the kink temperature on cavity loss and quantum-well width and the differential quantum efficiency minimum at the kink temperature were analyzed in terms of the temperature variation of the gain spectra and peak gain curves. Dependences of the characteristic temperature T 0 on the quantum-well width, cavity loss, and temperature range are discussed in terms of the variation of the peak modal gain versus current relation with temperature and quantum-well width

Published in:

Quantum Electronics, IEEE Journal of  (Volume:25 ,  Issue: 9 )