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Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

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3 Author(s)
Zhu, L.D. ; Inst. of Semicond., Chinese Acad. of Sci., Beijing, China ; Zheng, B.Z. ; Feak, G.A.B.

The temperature dependence of the optical gain in graded-index separate-confinement heterostructure single-quantum-well lasers with different quantum-well widths were investigated. The observed dependence of the kink temperature on cavity loss and quantum-well width and the differential quantum efficiency minimum at the kink temperature were analyzed in terms of the temperature variation of the gain spectra and peak gain curves. Dependences of the characteristic temperature T 0 on the quantum-well width, cavity loss, and temperature range are discussed in terms of the variation of the peak modal gain versus current relation with temperature and quantum-well width

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Quantum Electronics, IEEE Journal of  (Volume:25 ,  Issue: 9 )