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AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition

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7 Author(s)
B. Jalali ; AT&T Bell Labs., Murray Hill, NJ, USA ; R. N. Nottenburg ; W. S. Hobson ; Y. K. Chen
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Al0.48In0.52As/Ga0.47In0.53As heterostructure bipolar transistors are demonstrated using metalorganic chemical vapour deposition. The transistors have a cutoff frequency of 80 GHz and a common-emitter breakdown voltage of 5.5 V.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 22 )