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Computer simulation of boundary condition for Schottky barrier diodes

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1 Author(s)

A computer simulation of a GaAs Schottky barrier diode has been carried out, using a combination of a drift-diffusion equation solver and a Monte Carlo program. In contrast to previous similar reports, the authors found that a variable boundary condition is required, at least when the opposing barrier allows a Monte Carlo simulation to be accurately utilised.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 16 )