A computer simulation of a GaAs Schottky barrier diode has been carried out, using a combination of a drift-diffusion equation solver and a Monte Carlo program. In contrast to previous similar reports, the authors found that a variable boundary condition is required, at least when the opposing barrier allows a Monte Carlo simulation to be accurately utilised.
Published in:
Electronics Letters
(Volume:25
,
Issue:
16
)
Date of Publication: 3 Aug. 1989