By Topic

Charge-sensitive preamplifier for integration on silicon radiation detectors: first experimental results

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
P. Rehak ; Brookhaven Nat. Lab., Upton, NY, USA ; S. Rescia ; V. Radeka ; E. Gatti
more authors

The first implementation of a charge-sensitive preamplifier integrated on a fully depleted, high-resistivity silicon wafer and first results about its performance are reported. The preamplifier is based on a new type of implanted n-channel JFET, and it is implemented by the same process as for fully depleted silicon radiation detectors.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 16 )