A large-signal, analytic model for the GaAs MESFET

An analytic, large-signal model for the GaAs MESFET is presented. The device model is physics-based and describes the conduction and displacement currents of the FET as a function of instantaneous terminal voltages and their time derivatives. The model allows arbitrary doping profiles in the channel and is thus suitable for the optimization of ion-implanted and buried-channel FETs. It also accounts for charge accumulation in the conducting channel at high electric fields and the associated capacitance in a self-consistent manner. Theoretical predictions of the model are correlated with experimental data on X-band power FETs and excellent agreement is obtained.<
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