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GaAs MESFET modeling and nonlinear CAD

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1 Author(s)
Curtice, W.R. ; Microwave Semicond. Corp., Somerset, NJ, USA

Equivalent circuit modeling techniques are described for both small-signal and large-signal models of GaAs MESFETs. The use of large-signal model in an interactive program for amplifier analysis is shown. The computed load-pull results and IMD (intermodulation distortion) predictions are shown to be in good agreement with measured data at 10 GHz

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:36 ,  Issue: 2 )