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A high-speed AlInAs/GaInAs monolithic dual-MSM photodetector has been demonstrated for long-wavelength coherent receiver applications. It exhibits a very low leakage current (<2 nA at 8 V), attains extremely high electrical isolation (>1000 M Omega ), and shows strong suppression to local oscillator laser intensity noise (>16 dB up to 5 GHz). This device has been fabricated using FET planar process technology to obtain a high-performance balanced mixer receiver for high-density wavelength-division-multiplexed systems.
Date of Publication: 3 Aug. 1989