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Silicon compatible organic light emitting diode

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7 Author(s)
Kim, H.H. ; AT&T Bell Labs., Holmdel, NJ, USA ; Miller, T.M. ; Westerwick, E.H. ; Kim, Y.O.
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As an effort toward a goal of monolithic optoelectronics for silicon (Si) chip-to-chip connections, we have fabricated organic light emitting diodes (LED's) using either heavily N-doped silicon (Si) as a cathode or P-doped Si as an anode. A thin silicon dioxide (SiO2 ) layer, thermally grown on Si before deposition of a polymer or a molecular organic layer, enhances the electron injection into the semiconducting emissive layer. Without the thin oxide layer, no light was observed from LED's made from either (2-methoxy, 5-(2'-ethyl-hexoxy)-1, 4-phenylene vinylene) (MEH-PPV) or 8-hydroxyquinoline aluminum (Alq). With the SiO2 layer,the internal quantum efficiencies as high as 0.02% and 0.5% have been observed for MEH-PPV and Alq, respectively, and the turn-on voltages were as low as 2.5 V and 8 V, again for MEH-PPV and Alq, respectively. From the LED response time measurement, we identified RC constant and the recombination time of transport-related traps as the speed limiting factors

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Lightwave Technology, Journal of  (Volume:12 ,  Issue: 12 )