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Arbitrary phase shift by selective MOVPE growth and its application to 1.5 μm λ/4 phase-shifted InGaAs/lnGaAsP MQW-DFB-LDs

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2 Author(s)
Shim, J.-I. ; Dept. of Electron. Eng., Hanyang Univ., Ansan ; Kitamura, M.

A new method which uses selective MOVPE growth is proposed to introduce arbitrary phase shifts and applied to 1.55 μm MQW-DFB-LDs. Additional phase shifts produced by the differences in the selectively grown waveguide structures are estimated experimentally, and effective λ/4-phase-shifted 1.5 μm InGaAs/InGaAsP MQW-DFB-LDs are realised

Published in:

Electronics Letters  (Volume:30 ,  Issue: 25 )