By Topic

Improved reflectivity of AlPSb/GaPSb Bragg reflector for 1.55 μm wavelength

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Anan, T. ; Opto-electron. Res. Labs, NEC Corp., Tsukuba ; Shimomura, H. ; Sugou, S.

A high-quality AlPSb/GaPSb Bragg reflector lattice matched to InP was grown by gas-source molecular beam epitaxy, and highly reflective DBR mirrors were obtained by improving both the layer flatness and the compositional uniformity. A reflectivity of over 99% was obtained at 1.6 μm from a 20 pair AlPSb/GaPSb quarter-wave mirror, demonstrating the advantage of using this material system to fabricate long-wavelength surface-emitting lasers

Published in:

Electronics Letters  (Volume:30 ,  Issue: 25 )