System Maintenance Notice:
Single article purchases and IEEE account management are currently unavailable. We apologize for the inconvenience.
By Topic

Band offsets of In0.30Ga0.70As/In0.29 Al0.71As heterojunction grown on GaAs substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Shieh, J.‐L. ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Chyi, J.-I. ; Lin, R.‐J. ; Lin, R.M.
more authors

Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In 0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71±0.05 eV which corresponds to a conduction band offset to bandgap difference ratio ~0.66. The comparison between experimental and theoretical results is presented

Published in:

Electronics Letters  (Volume:30 ,  Issue: 25 )